14 DAY TRIAL // MoSys, one of the leading providers of high-density system-on-chip embedded memory intellectual property, announced recently the availability of an application-specific implementation of its industry-leading 1T-SRAM memory IP for the cellular phone market. The MoSys 1T-SRAM Dual-Port Display macros have been designed specifically for mobile handset displays.
Manufacturers of mobile handsets are under increasing pressure to incorporate larger buffer memory into the display to accommodate increases in display size and pixel densities. Such increases are driven by added functionality, like video playback, gaming, and high-resolution cameras on mobile phones. The MoSys 1T-SRAM Dual-Port Display macro is used as the display buffer memory mounted on the display (chip-on-glass) or on the connecting cable (chip-on-film or tape carrier package). By keeping the display buffer memory on the display itself, mobile vendors can reduce electromagnetic interference challenges, while cutting overall display power consumption. In these configurations, the buffer memory must conform to unusual areas and form factor requirements of the display, which is easily accomplished using the MoSys 1T-SRAM technology.
Compatible with high-volume processes at major foundries and integrated device manufacturers, the MoSys 1T-SRAM Dual-Port Display macro uses standard foundry process technologies and offers a reduction in overall silicon area of up to 70 percent when compared to conventional embedded memory solutions.
Initial customer adoption is already underway, marking MoSys' entry into a new high-volume consumer market.