The new LPDDR4X RAM module was announced today

Jan 9, 2017 13:02 GMT  ·  By

Samsung’s upcoming Galaxy S8 smartphone will surely be an exciting flagship and information about the upcoming phone keeps surfacing. The latest regards its 8GB of RAM module, which was just announced by chip maker SK Hynix.

SK Hynix is South-Korea’s second-largest chipmaker, and the company has just announced the new mobile DRAM chip, which will be featured on Samsung’s upcoming Galaxy S8. There’s talk that the new chip might also be mounted on Apple’s iPhone 8, set to be announced later this year, according to a report.

“SK hynix’s chips will be able to help smartphone users maximize their mobile experience,” said Oh Jong-hoon, the head of the firm’s DRAM product development division.

The new chip is 20% faster than its predecessor

The Low Power Double Data Rate 4X chip has the world’s highest density of 8GB and is said to be 20% more power efficient than the current LPDDR4 module, which was used in the Galaxy S7 and Galaxy S7 edge. SK Hynix stated that it used the dual-channel technology to connect two 8GB DRAM chips and apparently staked them in four layers in order to create this new DRAM chip.

The memory chip measures 12 millimeters by 12.7 millimeters and has a depth of 1 millimeter. This means that it takes up about 30% less space in a mobile device, compared to current 8GB DRAM chips. The new chip has the capacity to process 34.1GB of data per second with 64-bit input-output ports.

The new chip will most likely be coupled on the Galaxy S8 with Qualcomm’s Snapdragon 835 SoC, which is also smaller in size and has improved performance compared to its predecessor. The SoC is coupled with Adreno 540 graphics processing unit, which gives it superior graphics performance.

SK Hynix expects demand for 8GB mobile DRAM chips to raise this year, as they will become a popular feature in upcoming smartphones.