For use in high-density memory and storage devices

Apr 15, 2013 16:11 GMT  ·  By

Not long ago, we noted TSMC's new plans for 16nm chip production, and how they have been accelerated due to pressure from other corporations that have their own foundries, primarily Globalfoundries and Samsung.

Now we can safely say that a big part of why Samsung has turned into an archrival is its dedication to pushing forward new things.

In this case, the company has begun mass-producing 3-bit multi-level-cell (MLC) NAND Flash memory chips of 128 Gb.

They will be used in 128 GB memory cards, solid-state drives with capacities of over 500 GB, and other high-density memory and storage devices.

The performance level is of 400 Mbps too, based on the toggle DDR2.0 interface. All in all, it's none too shabby.

Go here for a more thorough exploration of the new technology.