14 DAY TRIAL // Announced in early 2006, the phase-change memory is preparing to make its debut later this year. Intel is among the first companies to support PRAM, preparing to sample a 90-nm 128-Mbit phase change memory module to customers in the first half of 2007. Mass production is likely to begin before this year's end, according to Intel.
The PRAM modules are intended as a replacement for current NOR flash non-volatile memory although performance stats prove that it could be used with a greater range of applications and might be able to replace DRAM modules in some high-end systems. Ever since 2000, Intel has been actively researching PRAM technologies, even though Energy Conversion Devices has been trying to introduce similar technologies for more than 30 years. In June 2006, Intel has teamed up with European chip maker STMicroelectronics NV in order to develop chalcogenide-based phase-change memory as a likely successor to flash memories.
Intel is not the sole company to develop PRAM modules. As a separate program, Qimonda AG, formerly the memory operation of Infineon Tecnologies AG, is researching phase-change memory technology with IBM Corp. and Macronix of Hsinchu, Taiwan. Furthermore, Renesas Technology Corp. and Hitachi Ltd. Recently discussed a phase-change non-volatile memory module for integration on microcontrollers used in embedded systems.
Returning to Intel now, we find out that their 128-Mbit phase-change memory proved to sustain more than 100 million read-write cycles and it is capable of data retention that greatly exceeds 10 years of thorough use. Intel expects a mass release for their PRAM modules next year, but this will greatly depend on positive customer reactions