14 DAY TRIAL // Intel has successfully created a viable replacement for the nowadays NAND flash memory and now is shipping its first units of phase change memory chips. While SanDisk is desperately trying to revive the (already) old NAND flash technology and extend its capacity, Intel ships its first units of the "Alverstone" 256 Mb multi-level (2 bit) cell devices.
The manufacturing technology uses the 90-nanometer processing node and has been developed by Numonyx, an Intel - ST Microelectronics joint venture. The PCM memory stores data in a way that resembles the CD and DVD data burning on an optical medium. Intel has been laying the ground for the new memory process since 2001, when the technology was called "ovonics" memory.
The Phase Change Memory is based on chalcogenide glass, a solid substance that can switch its state according to the applied temperature. Heat shifts it from crystalline and amorphous state, which results in a change of its electrical resistivity. PCM can hold data even when it has been turned off and makes a great replacement for the more expensive flash technology.
The main obstacle Intel had to overcome during the development of the new technology was defeating the material's heat-sensitivity. Intel's devices can survive 100,000 erase/write cycles, which is exactly the average lifespan for NAND-based storage media.
"This is the most significant non-volatile memory advancement in 40 years," said Ed Doller, chief technology officer-designate of Numonyx, in a statement. "There have been plenty of attempts to find and develop new non-volatile memory technologies, yet of all the concepts, PCM provides the most compelling solution - and Intel and STMicroelectronics are delivering PCM into the hands of customers today".
According to Intel spokespersons, the Numonyx joint-venture will "supply complete memory solutions for a variety of consumer and industrial devices, including cellular phones, MP3 players, digital cameras, computers and other high-tech equipment".