Aug 9, 2011 13:56 GMT  ·  By

At the upcoming Flash Memory Summit, which is scheduled to open its gates later today in Santa Clara, California, SandForce will showcase a prototype SSD which uses 24nm MLC (multi-level cell) toggle NAND Flash chips manufactured by Toshiba.

By pairing SandForce's controllers with NAND memory built using this advanced fabrication process, solid state drive makers will be able to develop more affordable SSD products.

In order to counteract the reliability issues that tend to appear when moving to smaller production nodes, SandForce has worked together with Toshiba to expand its proprietary DuraClass technology with a series of new capabilities, including additional read recovery techniques.

These complement the control IC introduced by Toshiba in its 24nm toggle NAND Flash memory, which runs a special error checking and correction (ECC) algorithm on the chips without placing any burden on the host controller.

By using this technology, Toshiba claims that 24nm NAND allows for 1.9 times faster read speeds and 1.5 times faster write speeds, when compared with the current 32-nm generation devices.

According to the SandForce press release, Toshiba 24nm toggle Flash memory can operate up to 166 mega-transfers per second.

“As the principal inventor of NAND Flash memory, Toshiba is constantly evolving this technology to be the highest quality and most cost effective media for SSDs by working closely with innovative companies like SandForce,” said Shigeo Ohshima, Technology Executive, Memory Design and Application Engineering, Toshiba Corporation.

“The SandForce SF-2000 SSD Processor, combined with our new 24nm NAND Flash memory provides an optimal SSD solution to enable accelerated deployment of thin-and-light notebooks as well as mainstream enterprise applications.”

A 2.5-inch solid state drive built using a 6Gbps SandForce SF-2000 series controller and Toshiba 24nm toggle NAND Flash memory will be showcased at the Flash Memory Summit in Santa Clara, California. The expo will be opened between August 9 and August 11.