Stories about: 10-nanometer

Toshiba's Double Tunneling - The Quest for 100 Gb Flash Storage Toshiba unveiled on Wednesday that they have developed a new design process that will become a key component in building high capacity Flash storage devices. This approach is named double-tunnel layer technology and it involves using a thin layer of silicon nano-crystals that stores information between a pair of tunn...	13 December 2007 09:05 GMT

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Toshiba's Double Tunneling - The Quest for 100 Gb Flash Storage