The module is built with 30 micrometer-thick NAND chips

Dec 15, 2009 08:04 GMT  ·  By

Toshiba completed its first batch of sample high-density NAND flash memory modules, which are also the first to reach the high capacity of 64GB. The modules are fully compatible with the latest e•MMCTM standard and are not only a breakthrough in the area of embedded NAND flash chips, but they also reduce development burdens through the compliance with the JEDEC/MMCA Version 4.4(V4.4) standard for embedded MultiMediaCards. This compliance makes the chips capable of standard interfacing and simplified embedding in products.

The JEDEC/MMCA V4.4 compliant interface provides the chips with the capability of using essential functions that simplify the system development and, thus, make the chip-manufacturing process faster and cheaper.

The 64GB capacity was reached by combining multiple 32Gb (equivalent to 4GB) chips put together using the 32nm manufacturing process. The end-result were chips that, although measuring only 30 micrometers in thickness (thanks to the advanced chip-thinning and layering technologies used in their creation) were capable of storing up to 1,070 hours of music at a 128Kbps bit rate, 8.3 hours of high-definition video or 19.2 hours of standard-definition video.

The product uses the aforementioned thinning and layering technology in order to reach a size suited for mobile devices such as mobile phones, digital video cameras, smartphones and even somewhat larger devices such as netbooks. The memory core operates using 2.7V to 3.6V, while the interface uses 1.65V to 1.95V or (2.7V to 3.6V).

Their bus width is either x1, x4 or x8 and the target read and write speeds are of 37MB/s and 20MB/s, respectively (when operating in Sequential/Interleave Mode) and of 22MB/s and 9MB per sec, respectively when in Sequential/No Interleave Mode.

The 64GB NAND module is the flagship for what really is a complete line of products, with capacities ranging all the way down to 2GB. The exact product line contains modules with capacities of 2GB (THGBM2G4D1FBAI8), 4GB (THGBM2G5D1FBAI9), 8GB (THGBM2G6D2FBAI9), 16GB (THGBM2G7D4FBAI9), 32GB (THGBM2G8D8FBAIB) and the 64GB flagship model (THGBM2G9DGFBAI2).

The 64GB model is already available as samples and will enter mass-production in Q1 2010. The others will be available in samples starting with Q1 2010 and will hit mass production in Q2, except for the 16GB model (which will enter mass production in Q1) and the 2GB (set for the third quarter).

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Toshiba intros highest density NAND Flash memory modules
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