T-RAM and the newly founded
GLOBALFOUNDRIES have recently announced a joint collaboration meant to enable T-RAM's Thyristor-RAM embedded memory to take advantage of the latest 32nm and future 22nm manufacturing nodes. According to a recent press release detailing the partnership, the benefits of T-RAM's Thyristor-RAM embedded memory have already been proven using earlier nodes. However, the collaboration between the GLOBALFOUNDRIES and T-RAM will enable the solution to take advantage of a leading-edge process.
"We are excited about working with GLOBALFOUNDRIES on the next generation embedded memory technology. T-RAM has successfully completed extensive development of the Thyristor-RAM technology and has delivered a fully manufacturable and robust memory solution with proven yield, reliability, and low-cost of integration in earlier technology nodes." said Sam Nakib, president and CEO of T-RAM.
"We believe that GLOBALFOUNDRIES and their customers’ products provide a great opportunity to further develop and show-case T-RAM’s significant performance and economic advantages. T-RAM’s revolutionary Thyristor-RAM memory technology provides the highest combination of density and performance among all embedded memory technology candidates, and avoids the fundamental scalability challenges that face 6T-SRAM and other FET-based memory cells." Nakib added.
The Thyristor-RAM memory technology has been invented in and developed by T-RAM Semiconductor, which aims it at bulk and SOI processes. The high density offered by the aforementioned embedded memory can deliver support for larger on-chip cache memories. According to the company, it can be used to enhance the performance of microprocessors, while also presenting the potential of being used for other applications, such as system-on-chip designs for netbooks, smartphones, and other mobile devices.
GLOBALFOUNDRIES is a semiconductor manufacturing company that has been launched in March this year and is a collaboration between AMD and Advanced Technology Investment Company.