Samsung, a global leader in advanced memory technology, has recently announced that it has developed and validated the first DRAM chip and module, developed using a 40nm process technology. With the announcement, Samsung has also said that the new 1GB DDR2 module and its corresponding 1GB 800Mbps DDR2 SODIMM have both been certified for use with Intel's GM45 series Express mobile chipsets.

 

“Securing extremely advanced technology and system/platform validated operability underscores our commitment as technology leader to deploying the most efficient means of producing DRAM in the marketplace,” said Kevin Lee, vice president, technical marketing, Samsung Semiconductor, Inc.

 

Samsung also announced that, in addition to the new 40nm-based DDR2 memory modules, the company would continue to accelerate its migration to the 40nm process technology, focusing on the development of a 2GB DDR3 memory module, which should be ready for production by the end of 2009.

 

The company has good reasons for migration to the new process technology, as this technology is expected to not only provide power consumption reduction, but also increase productivity. When compared to a 50nm class memory, Samsung expects that the 40nm device will provide for about 30 percent power savings, by further reducing the voltage requirements. On the productivity side, the memory maker expects an increase of 60 percent.

 

Having reached the 40nm process technology, Samsung now expects that this will help the company develop new memory technologies, consequently bringing the next generation of memory modules to the market. These will take advantage of the upcoming DDR4 technology.

 

Just recently, Samsung introduced the world's first four-gigabit DDR3 DRAM chip, featuring the company's 50nm process technology. The new 4GB DDR3 chip has been developed so that high-performance computer systems, such as servers, can provide a more significant cost-saving plan, while also increasing the overall performance.