Samsung to Release Lowest-Powered DDR2 Memory for Servers

Samsung Semiconductor, the leading producer of DRAM (dynamic random access memory), announced the mass production of the highest density, lowest powered DDR2 memory available nowadays for servers. The 2GB-based DDR2 DRAM produced by Samsung is able to provide about 50 percent reduction in power at 1.55V. This is the best power performance that can be offered for the highest density server memory at the present time.

As the storage drives for servers are more and more power-hungry, data centers with arrays of servers suffer from the rapidly increasing energy costs and huge electricity fees. In the virtue of this, vendors are striving to design energy-efficient products. Also, IT managers seek this sort of components, and low-power memory as a solution for reducing energy costs.

"By combining a 2GB chip density with an 1.55 voltage using 60nm-class technology, we are delivering a tremendous value proposition to server OEMs," said Kevin Lee, vice president, technical memory marketing, Samsung Semiconductor, Inc. "Samsung's 2GB-based DDR2 memory devices offer the major energy savings that most IT managers are seeking."

The new 2GB-based DDR2 DRAM manages to double the existing highest server chip density. It is fully buffered and it's being manufactured in 4GB and 8GB modules through the 60 nm (nanometer) process technology, which today is the most advanced manufacturing process for DRAM used. On the other hand, Samsung is able to cover the complete range (1GB to 8GB) of low-power server modules, as it also offers an 1GB low-power DDR2 chip. This way, Samsung Semiconductor preserves its title as the world leader in advanced memory technology.

According to Victor de Dios, president of DE DIOS & ASSOCIATES, a memory industry analysis firm in Newark, CA, "DDR2 now accounts for almost 95 percent of the memory used in enterprise systems. The 2Gb, 1.55-volt DDR2 addresses the megabyte needs of a power-sensitive server market that will register an 110 percent increase in 4GB-and-higher memory densities from 2008 to 2009, with expansion into other applications beyond that."