Power efficiency is paramount when it comes to today's computing, especially on the enterprise front, and Samsung is all too eager to satisfy this requirement, as made clear by its new press release.
Regular memory modules of today can usually operate on a voltage of 1.5V, while low-power modules make do with 1.35V.
The latter types are most common in laptops and the enterprise market, where low power costs are essential.
Samsung decided to break through both of those barriers, actually succeeding in making high-capacity DDR3 modules that work on an even weaker voltage, of 1.25V.
Samsung has three modules in store, with capacities of 4 GB, 8 GB and 16 GB, respectively, enabled by 30nm 4 Gb DDR3 chips. The bandwidth is of up to 1,333 MHz.
“Our 1.25V RDIMM will add to an extremely robust memory portfolio for advanced enterprise server systems that are demanding higher energy efficiency from key components,” said Wanhoon Hong, executive vice president, memory sales & marketing, Device Solutions, Samsung Electronics.
“We are contributing to a greener IT environment through the introduction of more innovative memory designs, while enhancing shared value throughout the server segment.”
The 1.25V modules should start to show up in data centers, servers and other enterprise scenarios at some point next year (2012).
The 16 GB modules should be able to function on just 3.7 Watts per hour, about 15% less than 1.35V 16 GB RDIMMs based on 30-nm 4 Gb DDR3 DRAMs.
Furthermore, an even bigger gain will be noticed when comparing the newcomer with 40nm, 2 Gb DDR3 chips, since power saving will be of up to 60% in this instance.
September 16, 2011 (tomorrow) is when Samsung actually first discusses the module, as well as other things, publicly, during the Asia Pacific Datacenter Leadership Council, set to take place in Singapore.
Find us on Google+
No user comments yet.
Be the first to express your opinion!
