Samsung has recently announced that it has succeeded in developing the world's first four-gigabit DDR3 DRAM chip, by using the company's 50nm process technology. The announcement comes as a significant advancement in the push for higher volume memory chips, as users in the server market are continuously looking for ways to cut down on costs by reducing the number of servers they use. Samsung’s solution comes to provide support in that very sector, offering improved server time management and increased overall efficiency.

“We have leveraged our strength in innovation to develop the first 4Gb DDR3, in leading the industry to higher DRAM densities,” said Kevin Lee, vice president, technical marketing, Samsung Semiconductor, Inc. “By designing our 4Gb DDR3 using state-of-the-art 50-nm class technology, we are setting the stage for what ultimately will result in significant cost-savings, for servers and for the overall computing market,” he added.

According to Samsung, also known as a leader in advanced memory technology, its latest 4GB DDR3 high-density solution will provide a reduction of the electricity bills, specifically due to the lower level of power consumption. The new 4GB DDR3 chip can be used to develop 16GB dual-line memory modules (RDIMM), as well as 8GB unbuffered DIMM (UDIMM), designed for workstations and desktop PCs. In addition, Samsung’s new DDR3 memory chip can also be used in small outline or SODIMM memory modules for laptops, for up to 8GB of memory per module.

Samsung's new flash memory chips provide twice as much memory capacity, compared to the previous highest-density chip, which was only good for 2GB. Other specifications include a working voltage of 1.35 volts with a maximum speed of 1.6 gigabits per second. According to Samsung, 16GB module configurations can provide a power consumption reduction of 40 percent, due to the chips' higher density and because they use only half of the DRAM.