Samsung has presented more official information on its upcoming 40 nm memory chips. Adopting the 40 nm process gives Samsung the possibility to manufacture 32 Gb NAND flash memories that could be implemented in 64 Gb memory cards. This means that the cards are able to store up to 40 DVD-quality movies or over 16000 MP3's.
The new NAND flash memory features an all new CTF (charge trap architecture) which facilitates increased reliability and may improve manufacturing processes when aiming for 30 nm and even 20 nm in the near future.

The new CTF architecture is powered by the use of TANOS structures, which include tantalum, aluminum oxide, nitride, oxide and silicon. The development of 40 nm chips places Samsung ahead of direct competitors such as Intel, which struggle to release their first 45 nm chips.

Samsung claims that, according to its Moor's law-type theory, the company would be able to double capacities for NAND flash-based memory cards every 12 months. By releasing 64 Gb NAND flash memories, Samsung tries to offer alternatives to the highly-anticipated HD-DVD's and Blue Ray discs, and this is for the better, considering the ever growing demand of storage capacity in ever smaller devices.