Super Talent has now taken the microphone in order to show off a somewhat unique new means of boosting small block random performance, namely the addition of 32MB of DRAM, essentially meant to act as a buffer.

The SuperSpeed USB 3.0 standard defines the USB interface that is capable of communicating at up to 4.8Gbps (~5Gbps), which is ten times the speed of USB 2.0 ports.

Still, when creating a storage unit compatible with this connection, it is, in the end, the storage technology used that dictates the top speed at which reading and writing tasks can and are accomplished.

Eager to optimize the small block random performance of its flash drives, Super Talent has now come up with the idea of adding RAM to its USB 3.0 Express Drive line.

Thus it was that the hardware maker developed the USB 3.0 Express RAM Cache, a series of flash devices that each boast 32MB of DRAM, for a small block random performance increase of 300 percent.

Design-wise, they use a brushed aluminum enclosure and measure 87.5 x 25 x 8 mm, with the USB connector itself being protected by a cap of the same material.

"No longer are we talking about a 10x performance increase over USB 2.0, now we are talking about a real world experience that is up to 110x what our customers have experienced before,” said Super Talent COO, C.H. Lee.

“Adding RAM Cache to our USB 3.0 Express Drive line-up raises the bar we have establish with our first three USB 3.0 products and reiterates our commitment and leadership in the USB 3.0 space," the COO added.

The USB 3.0 Express Ram Cache drives have capacities of 32GB and 64GB and prices of $129 and $209, respectively. Both are accompanied by a two-year warranty.