NEC to Develop Next-Generation of Non Volatile RAM

NEC has announced that it has succeeded in developing a new type of memory that preserves the SRAM compatibility. The new discovery has been named MRAM, which stands for Magnetoresistive Random Access Memory, and is alleged to run at a speed of 250 MHz, the fastest MRAM speed in the world.

Apart from the fact that the MRAM is as fast as SRAM, one of the most important features of the new memory type is its non-volatility: the hardware is able to resume even if the computer power has been turned off. The unique memory type has been manufactured and designed exclusively by NEC. The company has adopted the 1 megabit capacity form factor.

The design incorporates a memory cell with two transistors, one magnetic tunnel junction, and a newly-developed circuit scheme that allows an operating speed of 250 MHz, which is almost double than the nowadays' MRAM speeds. Same speeds can only be achieved by the newer, LSI-embedded SRAM memory.

The NEC manufacturers have carried extensive tests on the memory, using an internal signal-monitoring circuit, and they have measured a data output time of 3.7 nanoseconds from a 250MHz clock edge.

"MRAM are expected to generate new value and applications for future electronic devices thanks to their nonvolatility, unlimited write endurance, high speed operation, and ability to cut memory power dissipation in half. For example, these features could enable instant start up of PCs and prevent drive recorders from losing data after a sudden break in power in the future. As substitutes for system LSI-embedded SRAM, MRAM can provide even more value as they are expected to enable extremely low power dissipation of system LSIs because they can sleep when they are not in use and wake up instantly."