Micron has many sorts of memory up for sale, but it has invented a new type of DDR3, one that focuses on low energy use without crippling performance or increasing costs overmuch.
The new RAM (random access memory) chips that Micron has made are called DDR3Lm and come in 2 Gigabit and 4 Gigabit capacities.
Both of them will be constructed on the 30nm manufacturing process technology and will enter volume production in the second quarter of the year (2012).
“Power reduction is becoming ever more critical in the fast growing ultrathin markets. Micron's expertise with traditional PC memory requirements enables these markets to enjoy high performance targets and optimal cost efficiencies,” said Robert Feurle, vice president for Micron's DRAM marketing.
“The combination of our commitment to customer collaboration and dedication to leading the way in DRAM technologies has proven highly successful, and this new class of 30nm DRAM continues to deliver on that promise.”
The 2 Gb DDR3Lm chips enable self-refresh power saving of up to 50% compared to regular 2Gb chips, even though performance can go up to -1600MT/s.
On that note, the 4 Gb chips are just as efficient but, thanks to a lower chip count compared to other chips of that capacity, are particularly well suited for tablets and ultrathin PCs (Ultrabooks). They can work at up to -1866 MT/s.
“As computing becomes more and more mobile, longer battery life is increasingly valuable to end users,” said Geof Findley, Intel's senior memory enabling manager.
“The reduced standby power consumption of low-power memory is a move in the right direction.”
The focus on low self-refresh power (IDD6) is what gives the 2 Gb and 4 Gb DDR3Lm chips their ability to allow mobile consumer electronics devices to last longer on each battery charge. No clue on which companies, if any, have already adopted the new memory or plan to.
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