Hynix Intros World's First 54nm 1GB DDR2 DRAM

Seoul, Korea-based Hynix Semiconductor, a leading provider of flash-based memory products, has recently announced that it has successfully developed the world's first mobile 1GB DDR2 DRAM that takes advantage of the company's new 54nm process technology. The newly announced solution will provide customers with a choice for a product that combines high speed performance and low power consumption inside a single package.

According to the specifications of the new DRAM, the device has been designed to deliver a maximum speed of 1066MHz, combined with a 32-bit I/O and a bandwidth of 4.26GB/s on a single-channel solution, while a bandwidth of 8.52GB/s on dual-channel is also possible. In addition to the high-performance specifications, the new DRAM device from Hynix has also been designed to provide the end-user with a 50% power consumption reduction, when compared to previous-generation mobile DDR, while a 30% reduction is also noticed when compared to the standard DDR2 SDRAM.

The new product from Hynix is expected to enter the mass production stage in the second half of this year and will likely be integrated in some of the upcoming mobile devices on the market, including Mobile Internet Devices (MIDs), netbooks or even high-end smartphones. The company also announced that its new DDR2 DRAM complied with the JEDEC standards and was available in JEDEC standard packages or custom packages, designed to the meet the requirements of a wide range of users.

Despite an ongoing trend to move to the faster DDR3 memory standard, there are still a lot of technology improvements that are meant for the current DDR2 memory standard. These allow the end-user to take advantage of better performance in a less power-consuming package, while also being compatible with today's hardware standards, consequently enabling an easy upgrade option.