14 DAY TRIAL // Samsung has recently announced that its new 4Gb-based 40 nanometer class low power DDR3 memory was selected by HP to be used in their ProLiant G7 servers, further expanding the collaboration between the two companies.
According to Samsung, the new 4Gb memory technology enables up to 100 percent higher memory performance than the widely used 60nm-class 1Gb DDR2 modules while also using over 84% less power.
In addition, the higher density allows manufacturers such as HP to build 32GB modules, expanding the overall memory capacity of their dual processor servers, up to a maximum of 384GB.
“Our new 4Gb 40nm-class DDR3 provides an ideal Green solution for server manufacturers seeking to meet the data center’s insatiable desire for higher performance, with higher densities at lower voltages,” said Jim Elliott, vice president, memory marketing and product planning, Samsung Semiconductor.
Every hardware component used in today's data center has come to play a critical role in its power consumption and performance, and memory is no exception to this rule.
“Clients can optimize overall system performance and keep costs down by leveraging high capacity, power efficient memory technology,” said Jim Ganthier, vice president of marketing, Industry Standard Servers and Software, HP.
"Industry-leading HP ProLiant servers combined with Samsung 4Gb memory technology allows clients to improve data center server and energy efficiency while accelerating application performance,” concluded the company's rep.
Samsung's memory chips run at 1333MHz frequencies, feature CL9 timings, and use just 1.35V of power.
In addition to 40nm class memory chips, Samsung also manufacturers 30nm memory, but these are limited at 2Gb capacities, for now.
Unfortunately, Samsung and HP did not state when the ProLiant G7 server line gets the new Samsung memory chips, or if they plan to extend its use to other server or workstation models.