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Fujitsu & Tokyo Institute of Technology Revolutionize the 65-nanometer Technology A New Material for 256Mbit FeRAM	By Anca Rusu, Technology Editor 3rd of August 2006, 07:02 GMT Adjust text size:


It appears that the nanotechnology is more and more accepted as being technology world's 'in style development method'. Every maker is trying to get involved in the evolution of this new emerged technology that promises high performance products and a dramatically revenue increase. Fujitsu couldn't stay away from this multi-billion dollars market segment, and it has just showcased its latest development produced using the 65 nm technology - a new material for a new generation of non-volatile Ferroelectric Random Access Memory (FeRAM), created in collaboration with Tokyo Institute of Technology (Tokyo-Tech). The material is in fact a tailored composition of Bismuth Ferrite (BiFeO3 or BFO) meant to deliver a storage capacity five times higher then other materials offer, the ones currently used in FeRAM production. Fujitsu and Tokyo-Tech unveiled and demonstrated their development during a meeting of the Japan Society of Applied Physics (JSPS) in March 2006 in Tokyo, and also at the International Symposium on Integrated Ferroelectrics (ISIF) in April 2006 in Hawaii. The effects of the new FeRAM implementation would be a very low power consumption and high speeds required for new generations of personalized mobile electronic products such as IC cards. The mass production, however, requires Fujitsu's 65nm process technology using the BFO-based material in a device structure similar to the one used to build FeRAMs using 180nm technology. FeRAMs using this material is said to be able to provide memory cell capacity of up to 256Mbits. "With further development of BFO, large-capacity 256Mbit FeRAMs can be realized that reach densities of two orders higher compared with the current capacity of 1Mbits. With this increased density, FeRAM applications will expand not only in the security applications, but also in new domains like "Quick-On-Computer," under which a computer can be immediately ready to use after turning on. FeRAMs also can be used in electronic paper devices, which let users browse and read a large volume of information traditionally written on plain paper," said the company.

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